Electrons, holes, and excitons in GaAs polytype quantum dots
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Other documents of the author: Climente, Juan I.; Segarra, Carlos; Rajadell Viciano, Fernando; Planelles, Josep
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Show full item recordcomunitat-uji-handle:10234/9
comunitat-uji-handle2:10234/7013
comunitat-uji-handle3:10234/8638
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Title
Electrons, holes, and excitons in GaAs polytype quantum dotsDate
2016Publisher
American Institute of PhysicsISSN
0021-8979Bibliographic citation
CLIMENTE, Juan I., et al. Electrons, holes, and excitons in GaAs polytype quantum dots. Journal of Applied Physics, 2016, vol. 119, no 12, p. 125705Type
info:eu-repo/semantics/articleVersion
info:eu-repo/semantics/publishedVersionSubject
Abstract
Single and multi-band k⋅p Hamiltonians for GaAs crystal phase quantum dots are used to assess ongoing experimental activity on the role of such factors as quantum confinement, spontaneous polarization,valence band ... [+]
Single and multi-band k⋅p Hamiltonians for GaAs crystal phase quantum dots are used to assess ongoing experimental activity on the role of such factors as quantum confinement, spontaneous polarization,valence band mixing, and exciton Coulomb interaction. Spontaneous polarization is found to be a dominating term. Together with the control of dot thickness [Vainorius et al., Nano Lett. 15, 2652 (2015)], it enables wide exciton wavelength and lifetime tunability. Several new phenomena are predicted for small diameter dots [Loitsch et al., Adv. Mater. 27, 2195 (2015)], including non-heavy hole ground state, strong hole spin admixture, and a type-II to type-I exciton transition, which can be used to improve the absorption strength and reduce the radiative lifetime of GaAs polytypes. [-]
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Journal of Applied Physics, 2016, vol. 119Rights
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