Electrons, holes, and excitons in GaAs polytype quantum dots
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Altres documents de l'autoria: Climente, Juan I.; Segarra, Carlos; Rajadell Viciano, Fernando; Planelles, Josep
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Mostra el registre complet de l'elementcomunitat-uji-handle:10234/9
comunitat-uji-handle2:10234/7013
comunitat-uji-handle3:10234/8638
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Electrons, holes, and excitons in GaAs polytype quantum dotsData de publicació
2016Editor
American Institute of PhysicsISSN
0021-8979Cita bibliogràfica
CLIMENTE, Juan I., et al. Electrons, holes, and excitons in GaAs polytype quantum dots. Journal of Applied Physics, 2016, vol. 119, no 12, p. 125705Tipus de document
info:eu-repo/semantics/articleVersió de l'editorial
http://scitation.aip.org/content/aip/journal/jap/119/12/10.1063/1.4945112Versió
info:eu-repo/semantics/publishedVersionParaules clau / Matèries
Resum
Single and multi-band k⋅p Hamiltonians for GaAs crystal phase quantum dots are used to assess ongoing experimental activity on the role of such factors as quantum confinement, spontaneous polarization,valence band ... [+]
Single and multi-band k⋅p Hamiltonians for GaAs crystal phase quantum dots are used to assess ongoing experimental activity on the role of such factors as quantum confinement, spontaneous polarization,valence band mixing, and exciton Coulomb interaction. Spontaneous polarization is found to be a dominating term. Together with the control of dot thickness [Vainorius et al., Nano Lett. 15, 2652 (2015)], it enables wide exciton wavelength and lifetime tunability. Several new phenomena are predicted for small diameter dots [Loitsch et al., Adv. Mater. 27, 2195 (2015)], including non-heavy hole ground state, strong hole spin admixture, and a type-II to type-I exciton transition, which can be used to improve the absorption strength and reduce the radiative lifetime of GaAs polytypes. [-]
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Journal of Applied Physics, 2016, vol. 119Drets d'accés
© 2016 AIP Publishing LLC
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