Hole spin relaxation in InAS/GaAs quantum dot molecules
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Otros documentos de la autoría: Segarra, Carlos; Climente, Juan I.; Rajadell Viciano, Fernando; Planelles, Josep
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Mostrar el registro completo del ítemcomunitat-uji-handle:10234/9
comunitat-uji-handle2:10234/7013
comunitat-uji-handle3:10234/8638
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Hole spin relaxation in InAS/GaAs quantum dot moleculesFecha de publicación
2015-09Editor
IOP Publishing LtdCita bibliográfica
SEGARRA, C., et al. Hole spin relaxation in InAs/GaAs quantum dot molecules. Journal of Physics: Condensed Matter, 2015, vol. 27, no 41, p. 415301.Tipo de documento
info:eu-repo/semantics/articleVersión de la editorial
http://iopscience.iop.org/article/10.1088/0953-8984/27/41/415301/pdfVersión
info:eu-repo/semantics/submittedVersionPalabras clave / Materias
Resumen
We calculate the spin–orbit induced hole spin relaxation between Zeeman sublevels of vertically stacked InAs quantum dots. The widely used Luttinger–Kohn Hamiltonian, which considers coupling of heavy- and light-holes, ... [+]
We calculate the spin–orbit induced hole spin relaxation between Zeeman sublevels of vertically stacked InAs quantum dots. The widely used Luttinger–Kohn Hamiltonian, which considers coupling of heavy- and light-holes, reveals that hole spin lifetimes (T 1) of molecular states significantly exceed those of single quantum dot states. However, this effect can be overcome when cubic Dresselhaus spin–orbit interaction is strong. Misalignment of the dots along the stacking direction is also found to be an important source of spin relaxation. [-]
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Journal of Physics: Condensed Matter, Volume 27, Number 41Derechos de acceso
© 2015 IOP Publishing Ltd
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info:eu-repo/semantics/openAccess
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