All solution processed low turn-on voltage near infrared LEDs based on core–shell PbS–CdS quantum dots with inverted device structure
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Altres documents de l'autoria: S. Sánchez, Rafael; Binetti, Enrico; Torre, J. A.; Garcia-Belmonte, Germà; Striccoli, Marinella; Mora-Sero, Ivan
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Mostra el registre complet de l'elementcomunitat-uji-handle:10234/9
comunitat-uji-handle2:10234/2507
comunitat-uji-handle3:10234/6973
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http://dx.doi.org/10.1039/C4NR01975J |
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Títol
All solution processed low turn-on voltage near infrared LEDs based on core–shell PbS–CdS quantum dots with inverted device structureAutoria
Data de publicació
2014Editor
Royal Society of ChemistryISSN
2040-3364Cita bibliogràfica
SANCHEZ, Rafael S., et al. All solution processed low turn-on voltage near infrared LEDs based on core–shell PbS–CdS quantum dots with inverted device structure. Nanoscale, 2014, vol. 6, no 15, p. 8551-8555.Tipus de document
info:eu-repo/semantics/articleVersió de l'editorial
http://pubs.rsc.org/en/Content/ArticleLanding/2014/NR/C4NR01975J#!divAbstractVersió
info:eu-repo/semantics/publishedVersionParaules clau / Matèries
Resum
Colloidal semiconductor quantum dots (QDs) are extraordinarily appealing for the development of light emitting devices (LEDs) due to tunable and pure color emission, brightness and solution processability. This last ... [+]
Colloidal semiconductor quantum dots (QDs) are extraordinarily appealing for the development of light emitting devices (LEDs) due to tunable and pure color emission, brightness and solution processability. This last advantage of the QD-LEDs is even more evident in the field of infrared emission where the devices currently used are prepared by high cost epitaxial techniques. Here we show the fabrication of low cost NIR QD-LEDs based on high quantum yield core–shell PbS–CdS QDs and a novel inverted device structure. Devices are produced using SnO2:F (FTO) as the conductive transparent contact, nanostructured TiO2 as the electron transport layer (ETL) and poly(3-hexylthiophene) P3HT as the hole transport layer (HTL). Despite the roughness of this ETL, the obtained external quantum efficiencies (EQEs) are similar to previously reported values, obtained with regular configuration and more expensive ITO substrates. A turn-on voltage as low as the QD band gap (1.47 eV) is achieved for a large area (1.54 cm2) and relatively stable QD-LEDs. [-]
Publicat a
Nanoscale, 2014, vol. 6, no 15Drets d'accés
© The Royal Society of Chemistry 2014
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