Unintentional High-Density p-Type Modulation Doping of a GaAs/AlAs Core–Multishell Nanowire
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Otros documentos de la autoría: Jadczak, Joanna N.; Płochocka, Paulina; Mitioglu, Anatolie A.; Breslavetz, I.; Royo, Miquel; Bertoni, Andrea; Goldoni, Guido; Smoleński, Tomasz; Kossacki, Piotr; Kretinin, Andrey V.; Shtrikman, Hadas; Maude, Duncan Kennedy
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Título
Unintentional High-Density p-Type Modulation Doping of a GaAs/AlAs Core–Multishell NanowireAutoría
Fecha de publicación
2014Editor
American Chemical SocietyISSN
1530-6984; 1530-6992Cita bibliográfica
JADCZAK, J., et al. Unintentional High-Density p-Type Modulation Doping of a GaAs/AlAs Core–Multishell Nanowire. Nano letters, 2014, vol. 14, no 5, p. 2807-2814.Tipo de documento
info:eu-repo/semantics/articleVersión de la editorial
http://pubs.acs.org/doi/full/10.1021/nl500818kVersión
info:eu-repo/semantics/submittedVersionPalabras clave / Materias
Resumen
Achieving significant doping in GaAs/AlAs core/shell nanowires (NWs) is of considerable technological importance but remains a challenge due to the amphoteric behavior of the dopant atoms. Here we show that placing a ... [+]
Achieving significant doping in GaAs/AlAs core/shell nanowires (NWs) is of considerable technological importance but remains a challenge due to the amphoteric behavior of the dopant atoms. Here we show that placing a narrow GaAs quantum well in the AlAs shell effectively getters residual carbon acceptors leading to an unintentional p-type doping. Magneto-optical studies of such a GaAs/AlAs core–multishell NW reveal quantum confined emission. Theoretical calculations of NW electronic structure confirm quantum confinement of carriers at the core/shell interface due to the presence of ionized carbon acceptors in the 1 nm GaAs layer in the shell. Microphotoluminescence in high magnetic field shows a clear signature of avoided crossings of the n = 0 Landau level emission line with the n = 2 Landau level TO phonon replica. The coupling is caused by the resonant hole-phonon interaction, which points to a large two-dimensional hole density in the structure. [-]
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Nano letters, 2014, vol. 14, no 5Derechos de acceso
© 2014 American Chemical Society
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