Show simple item record

dc.contributor.authorEscribano López, Purificación
dc.contributor.authorCarda Castelló, Juan Bautista
dc.contributor.authorDe Oliveira, Larissa Helena
dc.contributor.authorTodorov, Teodor Krassimirov
dc.date.accessioned2010-05-17T08:46:26Z
dc.date.available2010-05-17T08:46:26Z
dc.date.issued2008
dc.identifier.citationTODOROV, Teodor, et al. Influence of treatment conditions on chalcopyrite films deposited at atmospheric pressure. physica status solidi c, 2008, vol. 5, no 11, p. 3437-3440.
dc.identifier.issn1610-1634
dc.identifier.urihttp://hdl.handle.net/10234/12625
dc.description.abstractSpin‐coating technique was used to deposit precursor layers for chalcopyrite films of the series CuInX2 and Cu(In,Ga)X2 where X = S or Se or (S,Se). The influence of different parameters of the process, such as solution composition, air pre‐treatment and chalcogenation treatment is discussed with respect to film applicability in photovoltaic devices. Layer morphology, stochiometry and crystalline structure varied widely with the different compositions and treatments. Highly oriented CuInSe2 and Cu(In,Ga)Se2 films were obtained. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
dc.format.extent3 p.
dc.language.isoengen
dc.publisherWiley-Blackwellen
dc.relation.isPartOfPhysica status solidi. C; vol. 5, núm. 11
dc.rights.urihttp://rightsstatements.org/vocab/CNE/1.0/*
dc.titleInfluence of treatment conditions on chalcopyrite films deposited at atmospheric pressureen
dc.typeinfo:eu-repo/semantics/articleen
dc.identifier.doihttps://doi.org/10.1002/pssc.200779441
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess
dc.relation.publisherVersionhttps://onlinelibrary.wiley.com/doi/abs/10.1002/pssc.200779441


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record