Influence of treatment conditions on chalcopyrite films deposited at atmospheric pressure
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Other documents of the author: Escribano López, Purificación; Carda Castelló, Juan Bautista; De Oliveira, Larissa Helena; Todorov, Teodor Krassimirov
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comunitat-uji-handle2:10234/7053
comunitat-uji-handle3:10234/8639
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Title
Influence of treatment conditions on chalcopyrite films deposited at atmospheric pressureAuthor (s)
Date
2008Publisher
Wiley-BlackwellISSN
1610-1634Bibliographic citation
TODOROV, Teodor, et al. Influence of treatment conditions on chalcopyrite films deposited at atmospheric pressure. physica status solidi c, 2008, vol. 5, no 11, p. 3437-3440.Type
info:eu-repo/semantics/articlePublisher version
https://onlinelibrary.wiley.com/doi/abs/10.1002/pssc.200779441Abstract
Spin‐coating technique was used to deposit precursor layers for chalcopyrite films of the series CuInX2 and Cu(In,Ga)X2 where X = S or Se or (S,Se). The influence of different parameters of the process, such as solution ... [+]
Spin‐coating technique was used to deposit precursor layers for chalcopyrite films of the series CuInX2 and Cu(In,Ga)X2 where X = S or Se or (S,Se). The influence of different parameters of the process, such as solution composition, air pre‐treatment and chalcogenation treatment is discussed with respect to film applicability in photovoltaic devices. Layer morphology, stochiometry and crystalline structure varied widely with the different compositions and treatments. Highly oriented CuInSe2 and Cu(In,Ga)Se2 films were obtained. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) [-]
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Physica status solidi. C; vol. 5, núm. 11Rights
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info:eu-repo/semantics/openAccess
info:eu-repo/semantics/openAccess
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