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dc.contributor.authorZhou, Xinran R.
dc.contributor.authorLee, Jihoon H.
dc.contributor.authorSalamo, Gregory J.
dc.contributor.authorRoyo, Miquel
dc.contributor.authorClimente Plasencia, Joan Ignasi
dc.contributor.authorDoty, Matthew F.
dc.date.accessioned2014-03-14T18:57:19Z
dc.date.available2014-03-14T18:57:19Z
dc.date.issued2013
dc.identifier.issn1098-0121
dc.identifier.issn1550-235X
dc.identifier.urihttp://hdl.handle.net/10234/87449
dc.description.abstractWe use photoluminescence spectroscopy to investigate the ground state of single self-assembled InGaAs lateral quantum dot molecules. We apply a voltage along the growth direction that allows us to control the total charge occupancy of the quantum dot molecule. Using a combination of computational modeling and experimental analysis, we assign the observed discrete spectral lines to specific charge distributions. We explain the dynamic processes that lead to these charge configurations through electrical injection and optical generation. Our systemic analysis provides evidence of interdot tunneling of electrons as predicted in previous theoretical work.ca_CA
dc.format.extent8 p.ca_CA
dc.format.mimetypeapplication/pdfca_CA
dc.language.isoengca_CA
dc.publisherAmerican Physical Societyca_CA
dc.relation.isPartOfPhysical Review B, Volume 87, Issue 12, 15 March 2013, Article number 125309ca_CA
dc.rights©2013 American Physical Societyca_CA
dc.subjectSelf-assembledca_CA
dc.subjectquantum dot moleculesca_CA
dc.subjectquantum dotsca_CA
dc.subjectQDMsca_CA
dc.subjectQDsca_CA
dc.titleCoulomb interaction signatures in self-assembled lateral quantum dot moleculesca_CA
dc.typeinfo:eu-repo/semantics/articleca_CA
dc.identifier.doihttp://dx.doi.org/10.1103/PhysRevB.87.125309
dc.rights.accessRightsinfo:eu-repo/semantics/openAccessca_CA
dc.relation.publisherVersionhttp://journals.aps.org/prb/pdf/10.1103/PhysRevB.87.125309ca_CA


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