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dc.contributor.authorBeltrán Mir, Héctor
dc.contributor.authorPrades Tena, Marta
dc.contributor.authorMasó, Nahum
dc.contributor.authorCordoncillo Cordoncillo, Eloisa
dc.contributor.authorWest, Anthony R.
dc.date.accessioned2012-11-23T15:12:43Z
dc.date.available2012-11-23T15:12:43Z
dc.date.issued2010-02
dc.identifier.citationJournal of the American Ceramic Society (2010), 93, 2, p. 500-505ca_CA
dc.identifier.issn0002-7820
dc.identifier.urihttp://hdl.handle.net/10234/52419
dc.description.abstractCeramics of composition Ba(Ti1−xZnx)O3−x: 0.00003≤x≤0.01 exhibit modest semiconductivity, whose value is increased by up to two orders of magnitude under the action of a small dc bias voltage. The effect, which is not observed in undoped BaTiO3, occurs in both grain and grain boundary regions and is attributed to the nature of the defect structure, which contains highly polarized clusters. It is proposed that internal electron transfer within the clusters under the action of a dc bias voltage leads to a more conductive excited state, which gradually returns to the ground state when the dc bias is removed.ca_CA
dc.format.extent5 p.ca_CA
dc.language.isoengca_CA
dc.publisherAmerican Ceramic Societyca_CA
dc.rights© 2009 The American Ceramic Societyca_CA
dc.titleVoltage-Dependent Low-Field Bulk Resistivity in BaTiO3:Zn Ceramicsca_CA
dc.typeinfo:eu-repo/semantics/articleca_CA
dc.identifier.doihttp://dx.doi.org/10.1111/j.1551-2916.2009.03416.x
dc.rights.accessRightsinfo:eu-repo/semantics/closedAccessca_CA
dc.relation.publisherVersionhttp://onlinelibrary.wiley.com/doi/10.1111/j.1551-2916.2009.03416.x/abstractca_CA


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