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dc.contributor.authorMora-Sero, Ivan
dc.contributor.authorDittrich, Thomas
dc.contributor.authorSusha, A. S.
dc.contributor.authorRogach, A. L.
dc.contributor.authorBisquert, Juan
dc.date.accessioned2012-05-28T14:36:49Z
dc.date.available2012-05-28T14:36:49Z
dc.date.issued2008
dc.identifierhttp://dx.doi.org/10.1016/j.tsf.2007.12.110
dc.identifier.citationThin Solid Films, 516, 20, p. 6994-6998
dc.identifier.issn406090
dc.identifier.urihttp://hdl.handle.net/10234/39028
dc.description.abstractExtraction of electrons and holes photogenerated in CdSe quantum dots (QD) of 2.3 nm diameter, is monitored by Surface Photovoltage Spectroscopy. The extraction of electrons into a thin TiO<sub>2</sub> layer increases five-fold by absorption of N3 dye molecules on top of the QD layer. This process is facilitated by efficient hole extraction from the valence band of the QDs to the ground state of the N3 dye. Our results represent a direct measurement of charge separation in the N3/QD/TiO<sub>2</sub> system. © 2007 Elsevier B.V. All rights reserved.
dc.language.isoeng
dc.publisherElsevier
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/*
dc.subjectDye sensitized solar cells
dc.subjectElectron injection
dc.subjectQuantum dots
dc.subjectSurface photovoltage
dc.titleLarge improvement of electron extraction from CdSe quantum dots into a TiO<sub>2</sub> thin layer by N3 dye coabsorption
dc.typeinfo:eu-repo/semantics/article
dc.identifier.doihttp://dx.doi.org/10.1016/j.tsf.2007.12.110
dc.rights.accessRightsinfo:eu-repo/semantics/restrictedAccess
dc.type.versioninfo:eu-repo/semantics/publishedVersion


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