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dc.contributor.authorGarcía Belmonte, Germà
dc.contributor.authorMunar, Antoni
dc.contributor.authorBarea Berzosa, Eva María
dc.contributor.authorBisquert, Juan
dc.contributor.authorUgarte, Irati
dc.contributor.authorPacios, Roberto
dc.date.accessioned2012-05-28T14:36:46Z
dc.date.available2012-05-28T14:36:46Z
dc.date.issued2008
dc.identifierhttp://dx.doi.org/10.1016/j.orgel.2008.06.007
dc.identifier.citationOrganic Electronics: physics, materials, applications, 9, 5, p. 847-851
dc.identifier.issn15661199
dc.identifier.urihttp://hdl.handle.net/10234/39012
dc.description.abstractCharge carrier diffusion and recombination in an absorber blend of poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C<sub>61</sub>-butyric acid methyl ester (PCBM) with indium tin oxide (ITO) and aluminium contacts have been analyzed in the dark by means of impedance spectroscopy. Reverse bias capacitance exhibits Mott-Schottky-like behavior indicating the formation of a Schottky junction (band bending) at the P3H:PCBM-Al contact. Impedance measurements show that minority carrier (electrons) diffuse out of the P3HT:PCBM-Al depletion zone and their accumulation contributes to the capacitive response at forward bias. A diffusion-recombination impedance model accounting for the mobility and lifetime parameters is outlined. Electron mobility results to be 2 × 10<sup>-3</sup> cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> and lifetime lies within the milliseconds timescale. © 2008 Elsevier B.V. All rights reserved.
dc.language.isoeng
dc.publisherElsevier
dc.subjectCapacitance
dc.subjectImpedance spectroscopy
dc.subjectLifetime
dc.subjectMobility
dc.subjectOrganic solar cells
dc.subjectP3HT:PCBM heterojunctions
dc.titleCharge carrier mobility and lifetime of organic bulk heterojunctions analyzed by impedance spectroscopy
dc.typeinfo:eu-repo/semantics/article
dc.identifier.doihttp://dx.doi.org/10.1016/j.orgel.2008.06.007
dc.rights.accessRightsinfo:eu-repo/semantics/closedAccess


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