Tuning intraband and interband transition rates via excitonic correlation in low-dimensional semiconductors
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Altres documents de l'autoria: Planelles, Josep; Achtstein, Alexander W.; Scott, Riccardo; Owschimikow, Nina; Woggon, Ulrike; Climente, Juan I.
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Mostra el registre complet de l'elementcomunitat-uji-handle:10234/9
comunitat-uji-handle2:10234/7013
comunitat-uji-handle3:10234/8638
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INVESTIGACIONMetadades
Títol
Tuning intraband and interband transition rates via excitonic correlation in low-dimensional semiconductorsAutoria
Data de publicació
2018-08Editor
ACS PublicationsISSN
2330-4022Cita bibliogràfica
Planelles, J., Achtstein, A., Scott, R., Owschimikow, N., Woggon, U., Climente, Juan I. Tuning Intraband and Interband Transition Rates via Excitonic Correlation in Low-Dimensional Semiconductors. ACS Photonics Article ASAP DOI: 10.1021/acsphotonics.8b00689Tipus de document
info:eu-repo/semantics/articleVersió de l'editorial
https://pubs.acs.org/doi/10.1021/acsphotonics.8b00689Versió
info:eu-repo/semantics/acceptedVersionParaules clau / Matèries
Resum
We show that electron-hole correlation can be used to tune interband and intra-
band optical transition rates in semiconductor nanostructures with at least one weakly
confined direction. The valence-to-conduction ... [+]
We show that electron-hole correlation can be used to tune interband and intra-
band optical transition rates in semiconductor nanostructures with at least one weakly
confined direction. The valence-to-conduction band transition rate can be enhanced
by a factor (L/aB)
N – with L the length of the weakly confined direction, aB the
exciton Bohr radius and N the dimensionality of the nanostructure – while the rate of
intraband and inter-valence-band transitions can be slowed down by the inverse factor,
(aB/L)
N . Adding a hitherto underexplored degree of freedom to engineer excitonic
transition rates, this size dependence is of interest for various opto-electronic applica-
tions. It also offers an interpretation of the superlinear volume scaling of two-photon
absorption (TPA) cross-section recently reported for CdSe nanoplatelets, thus laying foundations to obtain unprecedented TPA cross sections, well above those of conven-
tional two-photon absorbers. Further, our concept explains the background of the
validity of the universal continuum absorption approach for the determination of par-
ticle concentrations via the intrinsic absorption. Potential applications of our approach
include low excitation intensity confocal two-photon imaging, two-photon autocorre-
lation and cross correlation with much higher sensitivity and unprecedented temporal
resolution as well as TPA based optical stabilization and optimizing of inter-subband
transition rates in quantum cascade lasers. [-]
Publicat a
ACS Photonics 2018, 5, 9Proyecto de investigación
MINECO project CTQ2017-83781-P; UJI project B2017-59; R.S., N.O., U.W. and A.W.A acknowledge DFG grants WO477-1/32 and AC290-1/1 and 2/1.Drets d'accés
Copyright © 2018 American Chemical Society
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