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dc.contributor.authorGalar, Pavel
dc.contributor.authorPiatkowski, Piotr
dc.contributor.authorNgo, Thi Tuyen
dc.contributor.authorGutiérrez Tovar, Mario
dc.contributor.authorMora-Sero, Ivan
dc.contributor.authorDouhal, Abderrazzak
dc.date.accessioned2018-07-09T10:01:36Z
dc.date.available2018-07-09T10:01:36Z
dc.date.issued2018
dc.identifier.citationGALAR, Pavel, et al. Perovskite-quantum dots interface: Deciphering its ultrafast charge carrier dynamics. Nano Energy, 2018, vol. 49, p. 471-480.ca_CA
dc.identifier.issn2211-2855
dc.identifier.urihttp://hdl.handle.net/10234/175538
dc.description.abstractUnderstanding electron and hole (e,h) transport at semiconductor interfaces is paramount to developing efficientoptoelectronic devices. Halide perovskite/semiconductor quantum dots (QDs) have emerged as smart hybridsystems with a huge potential for light emission and energy conversion. However, the dynamics of generated e-hpairs are not fully understood. Ultrafast UV–VIS transient absorption and THz spectroscopies have enabled us tounravel the processes of the e-h recombination within a hybrid film of methylammonium lead triiodide (MAPbI3)interacting with different amount of PbS/CdS core/shell QDs. To accurately analyze the complex behavior, weapplied a new model for e-h events in this hybrid material. The results obtained with sample having a highconcentration of QDs (7.3 mass percentage) indicate: (i) a large population (92%) of the photogenerated chargecarriers are affected by QDs presence. The main part of these carriers (85% of the total) in perovskite domaindiffuse towards QDs, where they transfer to the interface (electrons) and QD´s valence bands (holes) with rateconstants of 1.2 × 1010s−1and 4.6 × 1010s−1, respectively. 7% of these affected charged entities are excitonsin the perovskite domain in close vicinity of the interface, and show a recombination rate constant of 3.7 × 1010s−1.(ii) The carriers not affected by QDs presence (8%) recombine through known perovskite deactivationchannels. Lowering the QDs mass percentage to 0.24 causes a decrease of electron and hole effective transfer rateconstants, and disappearance of excitons. These results provide clues to improve the performance of perovskite/QD based devicesca_CA
dc.format.extent32 p.ca_CA
dc.format.mimetypeapplication/pdfca_CA
dc.language.isoengca_CA
dc.publisherElsevierca_CA
dc.relation.isPartOfNano Energy 49 (2018)ca_CA
dc.rights2211-2855/ © 2018 Elsevier Ltd. All rights reserved.ca_CA
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/*
dc.subjectPerovskiteca_CA
dc.subjectQuantum dotsca_CA
dc.subjectLEDsca_CA
dc.subjectLightingca_CA
dc.subjectHybrid nanostructuresca_CA
dc.subjectElectron and hole dynamicsca_CA
dc.titlePerovskite-Quantum Dots Interface: Deciphering its Ultrafast Charge Carrier Dynamicsca_CA
dc.typeinfo:eu-repo/semantics/articleca_CA
dc.identifier.doihttps://doi.org/10.1016/j.nanoen.2018.04.069
dc.relation.projectIDMAT2014-57646-P ; MAT2016-76892-C3-1-R ; PEII-2014-003-P ; 724424 - No-LIMITca_CA
dc.rights.accessRightsinfo:eu-repo/semantics/openAccessca_CA
dc.relation.publisherVersionhttps://www.sciencedirect.com/science/article/pii/S2211285518302982ca_CA
dc.date.embargoEndDate2020-04-28
dc.type.versioninfo:eu-repo/semantics/acceptedVersionca_CA


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