Fast and low temperature growth of electron transport layers for efficient perovskite solar cells
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Otros documentos de la autoría: Zhang, Jie; Juarez-Perez, Emilio J.; Mora-Sero, Ivan; Viana, Bruno; Pauporté, Thierry
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Mostrar el registro completo del ítemcomunitat-uji-handle:10234/9
comunitat-uji-handle2:10234/2507
comunitat-uji-handle3:10234/6973
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Fast and low temperature growth of electron transport layers for efficient perovskite solar cellsFecha de publicación
2015-01Editor
Royal Society of ChemistryCita bibliográfica
ZHANG, Jie, et al. Fast and low temperature growth of electron transport layers for efficient perovskite solar cells. Journal of Materials Chemistry A, 2015, vol. 3, no 9, p. 4909-4915.Tipo de documento
info:eu-repo/semantics/articleVersión de la editorial
http://pubs.rsc.org/en/content/articlehtml/2015/ta/c4ta06416jVersión
info:eu-repo/semantics/publishedVersionPalabras clave / Materias
Resumen
We describe a fast, simple and low temperature electrochemical technique for the preparation of zinc oxide
layers on rigid and flexible substrates. The layers, prepared from a zinc nitrate precursor, are of high
s ... [+]
We describe a fast, simple and low temperature electrochemical technique for the preparation of zinc oxide
layers on rigid and flexible substrates. The layers, prepared from a zinc nitrate precursor, are of high
structural and optical quality. They have been optimized to be applied as efficient electron transport
layers in CH3NH3PbI3-sensitized perovskite solar cells (PSCs). We show that an electrodeposition time of
only two minutes and a low processing temperature are sufficient to fabricate solar cells with a power
conversion efficiency close to 11%, with a high short circuit current and a small J–V curve hysteresis. The
key parameters of the cell functioning have been analyzed over a large applied voltage range by the
impedance spectroscopy technique. The solar cell characteristic changes with the ZnO layer deposition
time are explained by the variation of the recombination and charge transfer resistances. [-]
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J. Mater. Chem. A, 2015, 3Derechos de acceso
© 2015 The Royal Society of Chemistry.
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