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dc.contributor.authorSegarra Ortí, Carlos
dc.contributor.authorClimente Plasencia, Joan Ignasi
dc.contributor.authorRajadell Viciano, Fernando
dc.contributor.authorPlanelles Fuster, Josep
dc.date.accessioned2016-04-14T12:09:34Z
dc.date.available2016-04-14T12:09:34Z
dc.date.issued2015-09
dc.identifier.citationSEGARRA, C., et al. Hole spin relaxation in InAs/GaAs quantum dot molecules. Journal of Physics: Condensed Matter, 2015, vol. 27, no 41, p. 415301.ca_CA
dc.identifier.urihttp://hdl.handle.net/10234/158626
dc.description.abstractWe calculate the spin–orbit induced hole spin relaxation between Zeeman sublevels of vertically stacked InAs quantum dots. The widely used Luttinger–Kohn Hamiltonian, which considers coupling of heavy- and light-holes, reveals that hole spin lifetimes (T 1) of molecular states significantly exceed those of single quantum dot states. However, this effect can be overcome when cubic Dresselhaus spin–orbit interaction is strong. Misalignment of the dots along the stacking direction is also found to be an important source of spin relaxation.ca_CA
dc.format.extent14 p.ca_CA
dc.format.mimetypeapplication/pdfca_CA
dc.language.isoengca_CA
dc.publisherIOP Publishing Ltdca_CA
dc.relation.isPartOfJournal of Physics: Condensed Matter, Volume 27, Number 41ca_CA
dc.rights© 2015 IOP Publishing Ltdca_CA
dc.subjectspin-orbit interactionca_CA
dc.subjecthole spin relaxationca_CA
dc.subjectquantum dot moleculesca_CA
dc.titleHole spin relaxation in InAS/GaAs quantum dot moleculesca_CA
dc.typeinfo:eu-repo/semantics/articleca_CA
dc.identifier.doihttp://dx.doi.org/10.1088/0953-8984/27/41/415301
dc.rights.accessRightsinfo:eu-repo/semantics/openAccessca_CA
dc.relation.publisherVersionhttp://iopscience.iop.org/article/10.1088/0953-8984/27/41/415301/pdfca_CA


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