Hole spin relaxation in InAS/GaAs quantum dot molecules
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Other documents of the author: Segarra, Carlos; Climente, Juan I.; Rajadell Viciano, Fernando; Planelles, Josep
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comunitat-uji-handle2:10234/7013
comunitat-uji-handle3:10234/8638
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Title
Hole spin relaxation in InAS/GaAs quantum dot moleculesDate
2015-09Publisher
IOP Publishing LtdBibliographic citation
SEGARRA, C., et al. Hole spin relaxation in InAs/GaAs quantum dot molecules. Journal of Physics: Condensed Matter, 2015, vol. 27, no 41, p. 415301.Type
info:eu-repo/semantics/articlePublisher version
http://iopscience.iop.org/article/10.1088/0953-8984/27/41/415301/pdfVersion
info:eu-repo/semantics/submittedVersionAbstract
We calculate the spin–orbit induced hole spin relaxation between Zeeman sublevels of vertically stacked InAs quantum dots. The widely used Luttinger–Kohn Hamiltonian, which considers coupling of heavy- and light-holes, ... [+]
We calculate the spin–orbit induced hole spin relaxation between Zeeman sublevels of vertically stacked InAs quantum dots. The widely used Luttinger–Kohn Hamiltonian, which considers coupling of heavy- and light-holes, reveals that hole spin lifetimes (T 1) of molecular states significantly exceed those of single quantum dot states. However, this effect can be overcome when cubic Dresselhaus spin–orbit interaction is strong. Misalignment of the dots along the stacking direction is also found to be an important source of spin relaxation. [-]
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Journal of Physics: Condensed Matter, Volume 27, Number 41Rights
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