• openAccess   Anomalous oriented attachment growth behavior on SnO2 nanocrystals 

      Stroppa, Daniel G.; Montoro, Luciano A.; Beltran, Armando; Conti, Tiago G.; Da Silva, Rafael O.; Andres, Juan; Leite, Edson R.; Ramírez, Antonio J. Royal Society of Chemistry (2011)
      This work reports a detailed characterization of an anomalous oriented attachment behaviour for SnO2 nanocrystals. Our results evidenced an anisotropic growth for two identical 〈110〉 directions, which are equivalent according ...
    • closedAccess   Dopant segregation analysis on Sb:SnO2 nanocrystals 

      Beltran, Armando; Stroppa, Daniel G.; Montoro, Luciano A.; Conti, Tiago G.; Da Silva, Rafael O.; Andres, Juan; Leite, Edson R.; Ramírez, Antonio J. Wiley (2011-08-26)
      The development of reliable nanostructured devices is intrinsically dependent on the description and manipulation of materials properties at the atomic scale. Consequently, several technological advances are dependent on ...
    • closedAccess   Prediction of dopant atom distribution on nanocrystals using thermodynamic arguments 

      Stroppa, Daniel G.; Montoro, Luciano A.; Campello, Antonio; Gracia, Lourdes; Beltran, Armando; Andres, Juan; Leite, Edson R.; Ramírez, Antonio J. Royal Society of Chemistry (2014)
      A theoretical approach aiming at the prediction of segregation of dopant atoms on nanocrystalline systems is discussed here. It considers the free energy minimization argument in order to provide the most likely dopant ...
    • openAccess   Quantum mechanical modeling of excited electronic states and their relationship to cathodoluminescence of BaZrO3 

      Moreira, Mario Lucio; Andres, Juan; Gracia, Lourdes; Beltran, Armando; Montoro, Luciano A.; Varela, José A.; Longo, Elson American Institute of Physics (AIP Publishing LLC) (2013)
      First-principles calculations set the comprehension over performance of novel cathodoluminescence (CL) properties of BaZrO3 prepared through microwave-assisted hydrothermal. Ground (singlet, s*) and excited (singlet s** ...