Integrated Optical Amplifier–Photodetector on a Wearable Nanocellulose Substrate

Flexible optoelectronics has emerged as an outstanding platform to pave the road toward vanguard technology advancements. As compared to conventional rigid substrates, a flexible technology enables mechanical deformation while maintaining stable performance. The advantages include not only the development to novel applications, but also the implementation of a wearable technology directly in contact with a curved surface. Here the monolithic integration of a perovskite‐based optical waveguide amplifier together with a photodetector on a nanocellulose substrate is shown to demonstrate the feasibility of a stretchable signal manipulation and receptor system fabricated on a biodegradable material. An integrated optical amplifier–photodetector is developed in which the photocurrent is exploited that is generated in the organic–inorganic lead halide perovskite under an applied bias. Such photocurrent does not minimally perturb the amplifier operation and is used to monitor the light signal propagating along the waveguide, opening a broad range of applications for example to regulate the operation temperature.

Flexible optoelectronics has emerged as an outstanding platform to pave the road toward vanguard technology advancements. As compared to conventional rigid substrates, a flexible technology enables mechanical deformation while maintaining stable performance. The advantages include not only the development to novel applications, but also the implementation of a wearable technology directly in contact with a curved surface. Here the monolithic integration of a perovskite-based optical waveguide amplifier together with a photodetector on a nanocellulose substrate is shown to demonstrate the feasibility of a stretchable signal manipulation and receptor system fabricated on a biodegradable material. An integrated optical amplifier-photodetector is developed in which the photocurrent is exploited that is generated in the organic-inorganic lead halide perovskite under an applied bias. Such photocurrent does not minimally perturb the amplifier operation and is used to monitor the light signal propagating along the waveguide, opening a broad range of applications for example to regulate the operation temperature.
the most common flexible substrates. [30] To the best of our knowledge, there are very few reports of its use in combination with MHP for the preparation of solar cells; [31,32] with very limited performance but exhibiting a good potential for encapsulation.
In the present work, we propose a step forward in the design of wearable optoelectronic devices by the development of an integrated optical amplifier-photodetector on a biocompatible/ biodegradable NC substrate, based on polymer/MHP waveguides (WGs). Our approach to integrate MHP-based optoelectronics/photonics on flexible NC demonstrates: (i) an easy fabrication method to integrate the perovskite and electrodes onto a flexible and biocompatible NC substrates, (ii) a suitable design of the WG structure to enhance the optical gain of the MHP and the generated photocurrent, (iii) the successful integration of the photonic (WG-amplifier) and the optoelectronic (photodetector) components within the same flexible device, and (iv) an in situ monitoring of the photoluminescence signal inside the optical WG-amplifier through the generated carrier photocurrent. This configuration opens a broad range of electronic applications, we stress this point in the present work showing how the system could be an element of the electronic circuitry to regulate the operation depending on temperature.
The integrated WG amplifier-photodetector proposed in this work allows simultaneously the amplification of emitted light by the MHP and the signal monitoring by the photocurrent detected at metal contacts separated by the WG, as illustrated in Figure 1a. Essentially, we exploited the optical confinement at the WG, due to the refractive index contrast between the MHP core (2.24 at 780 nm), [12] the NC bottom cladding (1.54 at 780 nm) [28] and the poly(methyl methacrylate) (PMMA) top cladding (1.492 at 780 nm). The WG is optimized to propagate both the excitation beam at 532 nm end fire coupled at the input edge of the sample (represented by a green Gaussian profile) as well as the generated photoluminescence (PL) at 780 nm (red PL spectrum at the bottom right corner of Figure 1a) that will propagate along the WG structure. In these conditions, light decoupled at the WG output is characterized by amplification of stimulated emission (brown spectrum at the top right corner of Figure 1a), and the application of a bias voltage between the electrodes promotes the establishment of a photocurrent (blue data symbols at the top left corner of Figure 1a) proportional to the excitation fluency along the WG. Fabrication procedure is illustrated in Figure 1b and thoroughly reported in methods section and in Section SI1, Supporting Information). NC was obtained by a modified version of the protocol presented in ref. [33] . Then, a compact layer (see Figure S1 in the Supporting Information) of CH 3 NH 3 PbI 3 (MAPbI 3 ) perovskite (see X-ray diffractometer (XRD) Figure S2, Supporting Information) was deposited on top of NC, and then capped by a PMMA film after patterning Au electrodes on the surface of the semiconductor. All films showed low roughness (see Figure 1c and Figure S3, Supporting Information) and good homogeneity (see  b) Fabrication procedure. c) AFM image of the MHP surface on NC. d) SEM cross section of the device. e) Photograph of the device on NC held on a polymer strip (without electrical contacts). f) Longitudinal cross section of the WG and mode analysis. The low optical losses in the polymer allow the propagation of the excitation beam at 532 nm (TE 2 ) along the whole length of the WG (green curve), whereas the PL of the MHP at 780 nm (see red curve in (a)) is excited along the WG by the evanescent field of the mode at 532 nm, and it is coupled to the TE 0 mode confined in the semiconductor (red curve); under high enough excitation fluency the WG demonstrates ASE (see brown curve in (a)). g) Transversal cross section of the device with detail of the photodetector, which measures a photocurrent proportional to the applied bias voltage upon laser excitation beam propagation (blue symbols in (a)). Figure 1d). Since this compact device is implemented in a flexible NC substrate, it allows bending and wearable properties (see Figure 1e).

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Mode analysis carried out on a PMMA/MHP bilayer structure of 0.85/0.35 µm reveals that the pump beam at 532 nm supports the first three propagation modes in each polarization (see Section SI2 in the Supporting Information). These modes are spatially distributed along the semiconductor (TE 0 and TE 1 ) and the polymer (TE 2 ) with negligible difference between the transverse electric (TE) and magnetic (TM) polarizations, thus the discussion about TE can be extended to TM modes. Propagation at 532 nm along the TE 0 and TE 1 modes, however, is inhibited by the high absorption coefficient of the MHP at this wavelength (about 13 µm −1 ); [11,12] and hence pump beam at 532 nm mainly travels along the TE 2 mode (see Figure 1f) whose losses are reduced down to 0.05 µm −1 . In these conditions, evanescent field of TE 2 in the MHP (0.3% overlap) generate PL at 780 nm along the entire length (≈1 mm) of the WG. On the opposite, the TE 0 and TE 1 modes supporting the propagation of PL peaked at 780 nm are highly confined (70% overlap) in the MHP, see Figure 1e, and will promote amplification of the spontaneous emission (ASE) for high enough laser excitation fluencies. Indeed, we already demonstrated that the PMMA layer on top of MHP (in this case deposited on a rigid substrate) produced a double beneficial effect that assured low ASE threshold: 16 (i) PMMA encapsulates the perovskite making the device stable over several months, [16] and (ii) The low losses of the mode at 532 nm confined in the PMMA allows a nearly uniform excitation of the MHP layer in the WG structure. For comparison purposes a less demanding rigid system PMMA/MHP integrated in silicon substrates has been also produced and characterized. In this configuration, a pump fluency of about 100 nJ cm −2 corresponds to ≈2 × 10 20 photons cm −2 , which gives rise to ≈3.5 × 10 18 electrons per pulse cm 3 from valence to conduction band (≈E·α/hν, where E is the pump fluency, α the absorption coefficient and hν the energy of the incident photon). Assuming the aforementioned uniform excitation and the geometrical parameters of the excited MHP film (100 µm wide, 0.5 µm thick, 1 mm length) 1.7 × 10 11 electron-hole pairs/pulse will be generated in the whole waveguide at the ASE threshold. Since the passivation of grain boundaries in MHP film [16,34] lead to an enhancement of the emission quantum yield up to 70%, [35,36] most of these pairs potentially will recombine radiatively increasing the PL signal.
Simultaneously, the application of an electric field when the MHP is optically pumped will promote a portion of those photogenerated carriers toward the external electrical circuit, i.e., give rise to an electrical photocurrent (transversal cross section in Figure 1g). The photoresponse of the photoconductive detector under illumination is analyzed simultaneously with the PL/amplification experiment for different applied bias, where the electric field can be also tuned by using different gap distance between electrodes (see Figure 1f). As a result, the device demonstrates photocurrents of 10-100 nA (varying slightly for different fabricated devices and electrode gap distance) under low bias voltages (5-10 V) at the ASE threshold energy inside the WG, which is observed at ≈4 nJ with a line width of ≈5 nm. Indeed, we demonstrate very close performance of the subsystem fabricated on NC standing over both rigid and flexible holders/supports. Therefore, our approach paves the road of a future technology for wearable devices that could be directly printed on paper or incorporated in clothes or other curved surfaces by using NC as intermediate substrate.
MHP films deposited on NC were firstly examined under surface illumination in order to establish their optical and electro-optical properties as compared to the same films deposited on rigid substrates. The absorption coefficient of the films as a function of wavelength (left axis of Figure 2a) presents a sharp band edge beginning at around 770 nm (1.61 eV), a visible exciton resonance at 750 nm (1.65 eV) and a monotonous increase below the bandgap wavelength, in agreement with previous publications. [11,12] Indeed, the NC substrate did not introduce any significant spectral changes as compared to the film deposited on glass (see Figure 2a). Similarly, PL under low fluencies shows similar spectrum for both films deposited either on glass or on NC (see Figure 2a). In both cases the MHP film exhibits ASE for high enough excitation fluencies (1 ns pulsed laser at 532 nm with 1 KHz of repetition rate) (see Figure 2b): [12,15] The Gaussian-shaped PL band centered at ≈780 nm with a full width at half maximum (FWHM) ≈55 nm becomes an intense and narrow Lorentzian ASE line with FWHM <10 nm ( Figure 2b) centered at 785 nm. The slight redshift in the ASE peak as compared to the maximum of PL is usually found in ASE devices, [11,12] which is due to the reabsorption effect of photons produced at the high energy tail of the PL.
It is important to highlight that ASE threshold, ≈10 µJ cm −2 shown in Figure 2b, is very similar in MHP films deposited on both glass and NC substrates, as observed in the inset of Figure 2b; this value is in agreement with other studies. [37,38] This result confirms the good optical quality deduced from absorption/PL measurements in both cases. The observed slight increase of the ASE threshold in NC samples can be initially attributed to a higher contribution of nonradiative channels, which can be related to the smaller grain size of MHP on NC measured by atomic force microscope (AFM). According to the kinetics study shown in Figure 2c, the experimental decay time of the PL measured on these MHP films under low excitation fluencies (below ASE threshold) is slower when deposited in glass than in NC substrates. Indeed, the data were fitted by an effective decay time, τ eff , of 13 and 6 ns for glass and NC, respectively. The exciton radiative lifetime in our MHP films results to be τ r = 18.6 ns, as estimated from the relation 1/τ eff = 1/τ r + 1/τ nr , where τ nr is the nonradiative recombination time, and the quantum yield (QY = τ nr /(τ nr+ τ r )) of ≈70% for MHP films reported elsewhere. [36,37] By taking into account that τ r should be the same in both substrates, the nonradiative recombination time for MHP deposited on NC is τ nr (NC) = 8.9 ns (whereas τ nr (glass) = 43 ns), which would give a drop in the QY up to 32%. It is difficult to give a precise microscopic origin of the increased influence of nonradiative channels (smaller nonradiative times in perovskite on nanocellulose as compared to that on silicon/SiO 2 ), but possibly is related to an increased density of point/linear crystalline defects in the case of nanocellulose promoted by its surface peculiarities and subsequent perovskite crystallization as compared to SiO 2 .
In addition, the lower thermal conductivity of NC (0.22-0.53 Wm −1 K −1 ) [39] as compared to glass (≈1 Wm −1 K −1 ) can also influence the ASE threshold difference. Indeed, the ASE www.advopticalmat.de spectra registered in the case of MHP on NC (Figure 2b) where unstable after some minutes, as compared to the films deposited on glass that demonstrated good stability under the same laser excitation conditions. On the opposite, a stable ASE operation in MHP was observed when the repetition rate was reduced down to 100 Hz, probably because a duty cycle of 10 ms between ns-pulses allows a sufficient cooling recovery (see Section SI3, Supporting Information).
Several sample series were processed under ambient conditions to measure wave-guided PL signal and photocurrent to check for reproducibility. Both dark current and photocurrent were measured through the deposited two metal contacts defining the photoconductor, and they yield different values of resistivity and responsivity from sample to sample, as indicated in Table 1. From I-V curves under dark conditions (see Section SI4, Supporting Information), the resistivity measured in most of the films are within the range 3 × 10 3 -3.5 × 10 5 Ω cm, being found the larger dispersion in the case of the thinnest samples, likely due to the greater thickness inhomogeneity and surface roughness (in the case of NC). The smallest values, ≈3-5 × 10 3 Ω cm, are measured in 500 nm thick films deposited on NC, similar to values previously reported. [40,41] In other samples, where the MHP was deposited either on NC or SiO 2 / silicon, the resistivities were as high as 10 5 Ω cm. In these cases, assuming a mobility of ≈10 cm 2 V −1 s −1 as proposed elsewhere, [42] the electron concentration would be as low as 10 13 cm −3 , which can be related to a near intrinsic semiconductor behavior. [43] In samples exhibiting this more intrinsic behavior the dark current will be smaller, hence being more sensitive to low light levels for which higher responsivity would be possible to measure. [44] In this way, a certain minimum concentration of photogenerated carriers are needed to overcome the background electron concentration in thermal  www.advopticalmat.de equilibrium in order to give an appreciable photocurrent density J ph (J illumination = J dark + J ph = eµ n n 0 + eµ n Δn), assuming a n-type character for the MHP, [17,18] consistently with better responsivity values measured in more resistive films (Table 1). In MHP films under low illumination level (60 mW cm −2 at 532 nm under normal incidence, see inset in Figure 2d) exhibit a noticeable photocurrent of ≈2 × 10 3 and ≈10 2 nA (at 15 V of bias voltage, i.e., low applied electric field ≈1.5 kV cm −1 ) in SiO 2 /Si and NC substrates, respectively, as observed Figure 2d. The lower photocurrent of the films deposited on NC is again attributed to nonradiative carrier losses, but also to the smaller resistivity (higher dark current in this NC sample) and the worse thermal conductivity of NC.
The temporal response of the device seems to be limited by the RC constant of the photoconductive detector circuit (R = 1 MΩ, C = 330 pF), because it is observed a frequency bandwidth below 1 kHz, and the RC constant of the photoconductive device itself that gives a time constant of around 20 µs due to the high resistivity of the MHP film, see Figure SI8 (Supporting Information), at least for the excitation laser used in the experiments with 20 kHz of repetition rate. In any case, this is not a limitation factor for the concept device demonstrated in this work and future improvements are possible by optimizing both factors (photodevice and its external circuit).
The MHP amplifying device fabricated on NC was studied under end-fire coupling of a pulsed laser pumping at 532 nm (WG geometry, as shown in Figure 3a). Here It is worth to note that we have tested the amplifier device on NC supported on glass (Figure 3a) or directly the device on stand-alone NC (see Section SI6, Supporting Information) with similar results. In both cases, the ASE signal collected from the output edge of the WG as a guided mode (see Figure 3b) exhibits a narrow peak (whose linewidth is 5 nm for the highest laser excitation power used in the experiment, as indicated in Figure 3c) that grows superlinearly above a threshold of ≈4 nJ, as observed in Figure 3d. This behavior is quite similar as the one observed above under backscattering geometry and previously reported in similar structures integrated on a Si/SiO 2 rigid substrate. [15] Such a superlinear growth of the PL intensity (see Figure 3d) would follow a potential increase I PL ∝ I PUMP 2.5 , which would correspond to a gain G = 10 dB cm −1 at the output edge of the waveguide (L ≈ 1 mm long) [15] or, in other words, a modal gain (g) of 23 cm −1 (G(dB) = 10log(e g·L )), close to the material gain (g = Γ · g m ) since the confinement factor of the optical modes in the MHP film is close to 1. Here it is worth mentioning that PL intensity was stable during the measurement, although similar excitation conditions (20 kHz excitation source) did not show a stable ASE production under backscattering geometry. Therefore, the high confinement of emitted light by the active medium provided by this WG structure enhances the generation of light, and triggers the ASE regime. Moreover, the excitation fluencies shown in Figure 3c,d correspond to excitation light coupled with the whole PMMA/MHP/NC structure with a cross section of about 2 × 10 −5 cm 2 . Nevertheless, since this device propagates the light along the PMMA layer, only a 0.3% of the TE 2 mode at 532 nm travels along the MHP, reducing the thermal heating of the semiconductor and the effective ASE threshold (E th ) down to 600 nJ cm −2 , one order of magnitude smaller than that measured under backscattering geometry in Figure 2b. This E th corresponds to an average power of the external pumping laser as low as 0.8 mW, which is estimated by taking into account a coupling efficiency ≈10% inside the waveguide and the repetition rate (20 KHz) of the pulsed laser. Under the above given excitation conditions, the photocurrent mainly monitors photogenerated carriers by the pump beam travelling along the 1 mm long PMMA/ MHP WG, the same distance covered by the Au electrodes. The photocurrent, I PC , variation presented in Figure 3d indicates a clear correlation between I PL and I PC , where I PC ∝ I PUMP 1/2 before the saturation observed above E th . Moreover, I PC and I PL dependences can be nicely fitted (solid lines in Figure 3d) with the model developed in Section SI7 (Supporting Information). The simulations reveal a transparency carrier concentration for stimulated emission N 0 ≈ 1.5 × 10 18 in agreement with previous results. [16] This square root law for I PC as a function of the excitation fluency corresponds to the high carrier injection regime, while its saturation is attributed to the gain saturation mechanism in optical amplifiers, [24] where the increment of photogenerated carriers over N 0 is transformed into photons (stimulated  www.advopticalmat.de emission regime). In this way, the highest excitation fluencies reveal I PC up to 25-50 mA cm −2 for 100-600 V cm −1 applied electric fields inside the waveguide. Finally, it is worth mentioning that the device-on-NC presents again features very close to those obtained for MHP films on rigid substrates (see Section SI8, Supporting Information), except by a slightly higher peak energy threshold (4 instead of 2 nJ) and ASE linewidth (5 nm instead 2-3 nm) and higher photocurrents.
The integrated amplifier-photodetector device can be used for many applications related to signal amplification and processing at 780-790 nm (telecom, sensing, and other fields) but also at shorter/longer wavelengths by changing the metal or the halide in the MHP compound. One example is highlighted in Figure 4. A primary use would be the control itself of the optical amplifier to fix the threshold of operation, specially under temperature changes. If laser fluency is fixed below the threshold the PL peak intensity decreases above room temperature (spectra in Figure 4a and blue solid circles in Figure 4c), whereas the photocurrent measured simultaneously at the photodetector suffers a slight monotonous increase (blue hollow circles in Figure 4c), as expected if the population of free carriers increases with temperature as compared to that of free excitons. However, if laser fluency is fixed just above the threshold, the PL peak at the ASE wavelength decreases in a similar way (spectra in Figure 4b and red solid squares in Figure 4c), but this time the photocurrent is practically constant up to room temperature (red hollow squares in Figure 4c), due to its saturation regime (see above), and increases much faster when increasing temperature because the ASE regime is progressively lost against spontaneous emission.
In this work, we propose the monolithic integration of a WG amplifier-photodetector system in a flexible nanocellulose substrate for future wearable applications. The device allows an in situ monitoring of PL signal (in spontaneous and ASE regimes) decoupled at the edge of the waveguide by studying the photocurrent generated by the pump beam generating this PL. For this purpose, we successfully integrated a PMMA/ MAPbI 3 bilayer structure on the cellulose substrate without any significant degradation of the semiconductor, and inject the excitation light at the input edge of the flexible substrate. As a result, ASE is demonstrated with similar performances as those reported for rigid substrates. Moreover, we demonstrate the simultaneous photodetection of light photogenerating carriers in the MHP film by means of the integrated photoconductor with the WG amplifier. The resulting photocurrent demonstrates a clear correlation with the intensity of PL under spontaneous and ASE generation regimes as a function of the laser excitation fluency. Moreover, the different behaviors of the photocurrent in the two regimes will allow a broad range of applications, such as trigger generation, gain automatic control, signal processing for visible telecommunications and sensing. This potentiality has been demonstrated by varying temperature below and above room temperature. Therefore, the present work paves the road for the future integration of wearable photonic components using cellulose substrates.

Experimental Section
Products and Substrate Preparation: All chemicals were used as received. N,N-dimethylformamide (DMF) anhydrous, 99.8%, dimethyl sulfoxide (DMSO) anhydrous ≥99.9%, toluene anhydrous, 99.8%, and poly(methyl methacrylate) (PMMA) with average molecular weight of 350 000 were purchased from Sigma-Aldrich, methylammonium iodide (MAI) was purchased from DYESOL, and PbI2 99.99%, was purchased from TCI.MHP solutions with concentrations of 1.35 and 2.025 m were prepared by adding 1 mL of DMF and 95 µL of DMSO into each vial containing 622 and 933 mg of PbI 2 . The solutions were heated at 65 °C to dissolve PbI 2 . After cooled down to the room temperature, they were poured into corresponding vials containing 215 and 322.5 mg of MAI to make final solutions. PMMA solutions with concentrations of 99, 110 and 140 mg mL −1 in Toluene were prepared by stirring.
Device Fabrication: Cellulose nanocrystals were obtained via TEMPOmediated oxidation procedure slightly. The initial aqueous solution was composed by 10 g of Kraft pulp immersed in 1 L of purified water and stirred with a magnetic stirrer for half an hour. Later, the solution was sonicated for other 30 min in a 350 Watt ultrasonic bath, obtaining a preliminary homogeneous suspension of cellulose. Oxidant and catalyst species (0.162 g of TEMPO, 1.000 g of NaBr and 35 mL of NaClO) were added to the solution under stirring. The pH was monitored during the reaction and maintained at a value between 10.5 and 11 through the addition of 1 mL of 1 m NaOH at time. Once stabilized, the pH was neutralized by diluting the solution and letting the cellulose to deposit on the bottom of the bicker and then washed with purified water: the washing was repeated 15 times with at least 400 mL of water each. Cellulose concentration was measured weighting a known quantity of solution, subsequently placed in an oven at 60 °C. Once completely dried, the remaining cellulose was weighted again. Typical values were in the range 3-5 mg mL −1 . The concentration can be tuned by either dilution or concentration through water evaporation. The mechanical disintegration to release the nanofibers was reached through sonication using a Bandelin Sonopuls HD 2200 ultrasonic homogenizer with a 13 mm diameter ultrasonic tip for 2 min at 20 kHz frequency and100 W output power. This step was repeated twice for every sample, obtaining transparent NC fibrils suspension. Finally, the films were obtained by Adv. Optical Mater. 2018, 6, 1800201   Figure 4. Control of operation temperature of the photodevice. a,b) Evolution of PL spectra well below (a) and just above (b) the threshold of ASE for temperatures between 10 and 72 °C. c) PL intensity measured at 790 nm (filled symbols) and photocurrent (empty symbols) as a function of temperature below (blue) and above (red) the ASE threshold; the lines are guides for the eyes. Temperature measurements were done by using a Peltier device with area 1 cm 2 .
www.advopticalmat.de pouring the clear suspension on a 8.5 cm diameter Petri dish and drying it at 60 °C in an oven. The oven was equipped with a flat copper foil to maintain homogeneous temperature over the whole layer surface. The solution dried for 36 h, at the end a transparent and homogeneous film could be peeled off. These were stored at room temperature in a dehumidified container. To be handled NC films need to have 10-20 µm of thickness. This can be obtained by varying either the amounts of the poured solution or by changing the NC concentration. Samples used for the perovskite deposition were 20 µm thick (see Supporting Information section for more details). Then, NC was attached to glass substrates by using double sided tape at margins. In order to have a uniform and homogeneous layer of perovskite on plain glass and NC, substrates were ozone treated for 15 min just before spin coating of perovskite. MHP films were deposited by spin-coating of 50 µL of 1.35 and 2.025 m solutions for 50 s at 4000 and 3000 rpm, respectively. During spin coating, anti-solvent method was employed in order to help in the film crystallization, washing with nonpolar diethyl ether just before formation of white crystals in the substrate. At 30 and 60% RH, this could be relatively 8-9 and 12-13 s after starting the spin coating. Then substrates were annealed at 100 °C for 3 min. At the end of the process 350-500 nm thick MAPbI 3 films (thickness is controlled with the spin coating speed) were deposited on the NC. Once the perovskite was properly deposited on the flexible substrate, 1 mm 2 square and 30 nm thick Au electrodes were evaporated on the semiconductor. Then, gaps of 100, 500, and 1 µm were patterned by protecting the sample with an aluminum mask. Finally a ≈1 µm thick PMMA film is spin coated for 3000 rpm on the perovskite as capping layer and post baked at 80 and 150 °C each temperature. Here evaporated gold electrodes defining the photoconductive detector were protected with a resist before PMMA deposition, in order to enable the final bonding of silver wires with silver paint. The biocompatibility and flexibility of the cellulose substrate allows the-device-on-cellulose to be easily wore on or incorporated to any kind of substrate or surfaces. Here it was deposited on a polyimide strip (one side glued) to allow an easier examination of the optical electrical properties. For this purpose, edges of the sample were carefully cut with a thin blade from the back side (polymer strip). For electrical measurements, the whole device-on-cellulose/polymer stripe structure was pasted on glass in order to allow an easier bonding of Au wires and the electrical connections.
Structural Characterization: The morphology of the films was analyzed by SEM using a JSM7001F (field emission scanning electron microscope). The XRD patterns of the samples were measured using a X-ray diffractometer (D8 Advance, Bruker-AXS) (Cu Kα, wavelength λ = 1.5406 Å).
Optical Characterization: The device was examined at room temperature and ambient conditions by end-fire coupling a Nd:Yag laser doubled at 532 nm (SNP-20F-100 supplied by Team Photonics, France) at the input edge of the sample (pulse of 1 ns 20 KHz repetition rate) with the aid of 40× microscope objective (see Figure 1a). The waveguide PL of the MAPbI 3 at 780 nm (Figure 1a) was collected at the output edge of the structure with a 20× microscope objective and focused into a fiber optic connected to a HR4000 Ocean Optics spectrograph (estimated overall resolution better than 0.7 nm). Time resolved PL was carried out by focusing the PL into a Hamamatsu C5658-3769 avalanche photodetector connected to a BOXCARDPCS-150 electronics from Becker & Hickl GmbH. Photocurrent (see Figure 1a) is analyzed by applying an electric field between the Au electrodes and measuring the generated current by using a Keithley'sSeries 2400 Source MeterUnit (SMU). Detection below 1nA is limited in some cases by the dark current of the photoconductor and resolution of the multimeter. Frequency dependence experiments were carried out by illuminating the samples under continuous wave (CW) excitation at 532 nm (Z40M18-B, Z-laser Optoelektronic GmbH, Germany) chopped at a controlled frequency. Then photocurrent generated by the application of the external voltage with the SMU is synchronously detected with a lock-in amplifier (SR810, StandFord Research Systems) by previously filtering the DC component with a RC circuit. Time dependence electrical experiments were performed by detecting the photocurrent with the scope GDS-8208 (GW Instek, Taiwan). Additional characterization was performed by focusing the excitation beam on the top of the sample and measuring the backscattering PL/photocurrent with the same set-up. In addition, samples were also examined under CW excitation at 532 nm, and 1 ns pulsed Nd:Yag laser doubled at 532 nm with variable repetition rate 100-1 KHz (FTSS355-Q4-1KHZ adapted at 532 nm and supplied by CryLas Laser Systems, Germany). Temperature measurements were done by using a Peltier device with area 1 cm 2 .

Supporting Information
Supporting Information is available from the Wiley Online Library or from the author.