2024-03-29T13:12:28Zhttps://repositori.uji.es/oai/requestoai:repositori.uji.es:10234/858102023-07-21T12:05:49Zcom_10234_7013com_10234_9col_10234_8638
00925njm 22002777a 4500
dc
Climente, Juan I.
author
Segarra, Carlos
author
Planelles, Josep
author
2013
We study the effect of valence band spin–orbit interactions (SOI) on the acoustic phonon-assisted spin relaxation of holes confined in quantum dots (QDs). Heavy hole–light hole (hh–lh) mixing and all the spin–orbit terms arising from zinc-blende bulk inversion asymmetry (BIA) are considered on equal footing in a fully three-dimensional Hamiltonian. We show that hh–lh mixing and BIA have comparable contributions to the hole spin relaxation in self-assembled QDs, but BIA becomes dominant in gated QDs. Simultaneously accounting for both mechanisms is necessary for quantitatively correct results in quasi-two-dimensional QDs. The dependence of the hole spin relaxation on the QD geometry and spin splitting energy is drastically different from that of electrons, with a non-monotonic behavior which results from the interplay between SOI terms. Our results reconcile contradictory predictions of previous theoretical works and are consistent with experiments.
1367-2630
http://hdl.handle.net/10234/85810
http://dx.doi.org/10.1088/1367-2630/15/9/093009
Hole-spin relaxation
Spin orbit interactions
Engineering controlled terms
Spin orbits
Bulk inversion asymmetry
Spin relaxation
Semiconductor quantum dots
Engineering main heading
Spin–orbit-induced hole spin relaxation in InAs and GaAs quantum dots